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N ions implantation induced quantum well intermixing in GaInP/AlGaInP triple quantum-well laser structures was firstly reported in this work. N ions were implanted with the energy of 40 keV and dose of 1e17 ions/cm2, and thereafter rapid thermal annealing process were performed at 750 °C from 40 s to 200 s to induce the intermixing. The photoluminescence wavelength blue-shifts were found increased...
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