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Fully transparent tin-doped zinc oxide thin-film transistors (TZO TFTs) were successfully fabricated on glass substrate by radio-frequency sputtering at room temperature. In this reported work, TZO is adopted as the channel layer, SiO2 as the gate insulator and indium tin oxide as gate and source/drain electrodes. The surface morphology and crystallographic structure of the TZO films were evaluated...
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