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In this paper, the "three-step model" of photoemission mechanism for gallium nitride (GaN) photocathode is discussed. The first step is the absorption of incidence light. The incidence photon energy is absorbed by the electrons in the valence band, and this establishes the foundation that the electrons in the valence band are stimulated to the conduction band. The second step is the transportation...
In view of the important application of GaAs and GaN photocathodes in electron sources [1,2], the difference in the photoemission behavior, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes has been investigated using the multi-information measurement system. The reflection-mode GaAs and GaN photocathode samples both were grown by...
Summary form only given. Recent progress in Gallium Nitride (GaN, AlGaN, InGaN) photocathodes show great promise for future ultraviolet (UV) detector applications. Stability has been one main performance parameters for photocathode. The photoemission decay characteristics of GaN photocathode after the end of activation in ultra-high vacuum system was investigated using photocurrent and spectral response...
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