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We used scanning tunneling microscopy (STM) to study the structure, morphology and reaction when ultrathin Ti films (< 10 monolayers) were deposited in situ on 6H-SiC(0001) Si-terminated and (0001) C-terminated surfaces. Volmer-Weber growth of Ti islands was observed when deposition was carried out at room temperature. Annealing the surfaces at 700°C produced an ordered (√3 √3) phase and a disordered...
We have studied the reconstructions of the 6H SiC (0001) and (0001) surfaces after annealing at 850-950 o C under a Si flux using scanning tunneling microscopy (STM). On both the Si-terminated (0001) and C-terminated (0001) surfaces, we observed a (3 x 3) reconstruction after annealing at 850 o C, which changed to a (√3 x √3) reconstruction after further annealing at 950 o ...
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