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In this paper, a study of Ni suicide formed on SOI substrate that has different Si thickness (Tsi = 27, 50 nm) is performed in depth. The dependence of Ni silicide on the thickness of Ni/Co is also characterized. Ni silicide on SOI film exhibits quite different characteristics compared to that on bulk silicon. That is, Ni silicide on SOI showed 'V' shape as a function of deposited Ni/Co thickness...
In this paper, highly thermal stable nickel germanosilicide utilizing Ni-Ta alloy and Co/TiN capping layer (Ni-Ta/Co/TiN tri-layer) is proposed for high performance strained Si CMOS technology. The proposed Nickel Germanosilicide utilizing Ni-Ta/Co/ TiN structure exhibits low temperature silicidation and wide range of rapid thermal process (RTP) process window. Moreover, sheet resistance shows stable...
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