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Si nanoparticles with diameter of 1–20nm have been fabricated from Si swarf by use of a beads milling method. Treatment with dilute hydrofluoric acid stabilizes Si nanoparticles, and the thickness of the SiO2 layer formed by leaving nanoparticles in air for one week is only 1.2nm. p-Si nanoparticles/crystalline n-Si structure shows rectifying behavior, indicating formation of pn-junction. Treatment...
A method of observation of interface states for ultrathin insulating layer/semiconductor interfaces is developed by use of X-ray photoelectron spectroscopy (XPS) measurements under bias. The analysis of the energy shift of the semiconductor core level as a function of the bias voltage gives energy distribution of interface states. When the atomic density of SiO 2 layers is low (e.g., SiO ...
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