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A high density 50K∼100K/mm2 cross-tier connection featuring backside through-via (BTV) and wafer level 3D stacking technologies has been successfully demonstrated. Wafer stacking and thinning to < 1/250 Si thickness process showed little to no impact to advanced device performance. BTV induced stress effect was also studied; quite different behaviors between wafers with SiGe and without SiGe process...
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