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This paper presents a comparison of microstrip and cavity-backed cylindrical wraparound antennas. The antennas are analyzed using method of moments, and results of radiation patterns and input impedance are compared to each other, and to results from a commercial software. The effects of the cavity-backed confinement and of surface waves of the microstrip antenna are evaluated.
This paper presents an analysis of the bipolar effect in triple-gate n- and p-SOI devices with high-k/TiN metal gate. High-k dielectrics and thicker TiN achieve a larger trigger voltage. However, a reduced program window is found for MuGFETs with high-k dielectrics. p-FET devices give rise to a smaller sense margin and program window due to the reduced hole mobility. Narrow fin devices exhibit a larger...
SOI multiple-gate devices (MuGFETs) have shown to be promising choices to continue scaling. The devices show excellent gate control and thus reduced short-channel effects. Additionally, by using high-k dielectrics a gate leakage current reduction can be achieved. The incorporation of nitrogen into these high-k materials can improve their thermal stability, reduce the dopant penetration and allow further...
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