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A novel vertical silicon high voltage microwave power transistor is reported with high degree of robustness and inherent thermal self protection. The HVVFET device uses a deep dielectric platform with uniform channel doping that approaches near ideal breakdown voltages (> 110 Volts) for suitable epitaxial thickness and doping levels resulting in high power density. An integrated shield enables...
The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P1dB compression...
The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P 1 dB compression...
This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both a 25 Watt and a 100 Watt embodiment of the structure exhibit over 20 dB of gain with >45% efficiency...
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