The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel short channel vertical RF MOSFET (termed HVVFET™) has been developed for avionics and L-band radar applications. The HVVFET employs a silicided polysilicon spacer that is formed along a vertical dielectric sidewall to serve as the gate. A second silicided poly layer is sandwiched between the gate interconnects and the Si wafer, thereby completely shielding the gate from the drain. Consequently,...
A comparative analysis of HWFET™ with two different drain dopings is presented, demonstrating the dominant role of the drain conductivity in determining the device's quasi-saturation (QS) behavior. Numerical simulation shows that the E-field in the drift region increases with the drain voltage. The lightly-doped-drain device is shown to exhibit a higher peak E-field and larger e- velocity than its...
A detailed TCAD analysis of a low-Cgd high-power RF MOSFET incorporating a 0.25 mum sidewall gate is presented. A novel conductive plate is placed in the vicinity of the gate poly as well as underneath the gate interconnects to provide a complete shield of the gate from the influence of drain potential. The fabricated vertical DMOS device exhibits a Id(sat) = 750 muA/mum and an extrinsic transconductance...
The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P1dB compression...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.