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We report the fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) having metal-insulator-semiconductor (MIS) gate structure with the high-A/SiN and high-k/oxide/SiN insulator structures. The SiO2 and Al2O3 were used as the oxide, and the HfO2, ZrO2 and TiO2 were used as the high-k materials. Both high-k/SiN and high-k/oxide/SiN MIS-gate HEMTs showed good DC operating characteristics...
The paper demonstrates that H atoms diffused into the CVD tunnel oxide degrade the endurance of split-gate type flash EEPROMs. The authors observed that F-N stress application generates high trap densities at the tunnel-oxide/FG interface as well as negative charges in the tunnel oxide. The density of FN-induced traps and charges was found to strongly depend on the liner nitride (SiN) film quality...
We report the fabrication of AlGaN/GaN high electron mobility transistor (HEMT) with high breakdown voltage by employing the metal-insulator-semiconductor (MIS) gate structure. SiO 2 , SiN, and TiO 2 were used for the insulators. The gate leak current was significantly reduced by employing the MIS structure, and the breakdown voltage characteristics were improved. The breakdown voltage...
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