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Degradation prediction of AlGaN/GaN MODFET is explored based on characterization of gate and drain low- frequency noise. Heterostructures grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) are used for this purpose. Devices from the former category were unpassivated while those of the latter were passivated. Despite the highly variable gate noise current characteristics...
A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA), using balanced configuration with a coplanar waveguide (CPW) Lange coupler, is designed and fabricated. The LNA shows a minimum noise figure of 4 dB with associated gain of 20 dB and gain flatness of +/- 3 dB across the 3-16 GHz frequency range. This balanced GaN LNA is suitable for transceiver front-ends...
The reliability characteristics of AlGaN/GaN HEMTs are reviewed. Basic effects such as the discrepancy between DC predicted and RF measured power are addressed together with effects such as drain current and power degradation observed following RF stress. Technologies based on sapphire, SiC and Si substrates are considered. The impact of process such as passivation, as well as design i.e. barrier...
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