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This paper presents the design and measurement of an integrated millimeter wave wideband voltage controlled oscillator (VCO). This VCO employs the on-chip transmission lines and hyper-abrupt junction varactors to form high Q resonator. The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) BiCMOS technology. The VCO oscillation frequency is around 25GHz, targeting...
This paper presents an 80-MHz 12-bit cryogenic low-power digital-to-analog converter (DAC) implemented in a 0.5-mum SiGe BiCMOS technology. The cryogenic DAC is capable of operating over an ultrawide temperature (UWT) ranging from -180degC to +120degC and under the high-energy particle radiation environment on the lunar surface. A bandgap voltage reference for the UWT applications is designed using...
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated...
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