The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Spontaneous Lattice Inversion
In article number 2200057, Zhiqiang Liu, Shenyuan Yang, Yong Zhang, Peng Gao, and co‐workers confirm the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion. Furthermore, a vertical 2D electron gas is revealed at the...
The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted,...