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In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection,...
In inverter based motor drives, the fast switching speeds of the power devices along with the cable, result in overvoltage at the motor end. Corresponding to the overvoltage at the motor end, there are currents at the inverter end. While the overvoltage increases the stress on motor and insulation, the load parasitics along with the cable increases the switching loss of the power devices. These effects...
This paper investigates the impact of gate-loop layouts on the switching loss of a multi-chip silicon carbide metal-oxide-semiconductor field-effect-transistor (MSOFET) power module. Six gate loop layouts are proposed and evaluated in switching simulations. A 16.2% difference on the total switching loss is observed between a good and a bad gate loop layout. The results shows that the total switching...
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