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In this paper, a hybrid switch (HyS) consisting of a large silicon (Si) IGBT die in parallel with a small wide bandgap (WBG) die is proposed for generic power conversion drives. This HyS produces an inherent better conduction performance compared to the Si IGBT and WBG. A gate control option is recommended for minimum switching losses and switching frequency as high as 78 kHz can be achieved in HyS...
The characteristics applied in pulsed power area for the power semiconductor devices of RSD(reversely switched dynistor), thyristor and IGBT are compared synthetically in this paper. By establishing the two-dimensional electro-thermal coupling models for the three types of devices, the turn-on performances of each one at low and high current density are discussed, separately. The results show that...
In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work...
This paper presents a study of the influences of DBC metal trace layout on the reliability of the high power IGBT module. The research is conducted on a seven-layer IGBT package model using finite element analysis simulation. A parametric study is carried out at different temperatures to simulate the thermal-cycling scenario. It shows in simulation that both total deformation and thermal stress are...
During the dynamic test of high power switching devices, it can be challenging to measure both high speed and low amplitude signals accurately. This paper uses fast response on-die temperature sensing as an example to investigate the electromagnetic interference control of a typical double pulse test (DPT) setup. Three common noise sources are identified: 1) Conductive common-mode noise caused by...
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