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The electrical transport properties of Ni/Pd/n-GaN Schottky barrier diodes (SBDs) have been investigated in the wide temperature range of 100–425K. An abnormal decrease in the experimental barrier height (ϕ b ) and an increase in the ideality factor (n) with a decrease in the temperature have been observed. The observed variation in ϕ bo and n is attributed to the spatial barrier inhomogeneities...
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