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We have measured Shubnikov-de Haas oscillations on a top-gated AlGaAs/GaAs heterostructure. The sample is mesa etched into a Hall bar configuration and part of the Hall bar is covered with a Schottky gate. We observe anomalous peaks in the longitudinal resistivity. The strengths and positions of the anomalous peaks depend on the applied gate voltage. A model explaining the experimental results is...
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