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This paper compared the fatigue damage accumulation of the gold-tin eutectic die attach layer in different high electron mobility transistor (HEMT) packages with various types of die attach layers and substrates under thermal cyclic loading. The fatigue damage per cycle used in this study was characterized by the accumulation of plastic work, which was derived by the finite element analysis (FEA)...
We show that heteroepitaxy of thin films of InP on Al0.48In0.52As by MOVPE does not result in continuous flat layer growth, but instead develops a number of low dimensional structures, e.g. quantum dots and rings. We consider local phase separation/alloying-induced strain and preferred aggregation of adatom species on the substrate surface together with reduced wettability of InP on AlInAs to be the...
The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing the ternary substrates, the material gains were found as 3–5 times higher than that of conventional method with reduced wavelength shift. The threshold carrier density is reduced by 15%–50% from the use of ternary substrate...
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