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A graphene–silicon field-effect transistor (GFET) structure is demonstrated as a detector of single-stranded 13-mer DNA simultaneously at DC and 101GHz at three different molarities: 0.01, 1.0 and 100nM. The mechanism for detection at DC is the DNA-induced change in lateral sheet conductance, whereas at 101GHz it is the change in RF sheet conductance and the resulting effect on the perpendicular beam...
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