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Recently, the doping‐less tunnel FET has gained popularity due to its lower process complexity than conventional TFETs with heavily doped source and drain regions. In this literature, we have introduced a symmetric gate Ge/GaAs heterojunction doping‐less TFET(SG HJ DL TFET) using 4.6 eV work function for both the top gate and bottom gate and an asymmetric gate Ge/GaAs heterojunction doping‐less TFET...