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We have investigated the selective area growth of InP on nano-patterned Si substrates with SiO2 mask by molecular beam epitaxy. By optimizing the growth conditions, the growth of one separate InP single crystallite for each Si opening has been accomplished. It is found that when single crystallites coalesced into larger grains beyond Si openings, lattice strains were introduced in the grains because...
TlInGaAsN/TlInP/InP hetero-structures were studied for the application to the temperature insensitive wavelength laser diodes. By the introduction of N, the incorporation of Tl was increased, but optical properties were degraded. In order to solve this problem, TlInGaAsN/TlInP multiple layer structures with thin TlInGaAsN layer was proposed and the improvement in optical properties was confirmed.
To use III-V compound semiconductors as channel materials in the future advanced MISFETs with high performance, it is important to achieve the growth of III-V-on-Insulator structures on Si substrates. As a first step to accomplish this, we propose the selective formation of InP only on localized areas of Si (100) substrate by molecular beam epitaxy (MBE). It was found that InP was selectively grown...
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