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The Si-SiO2 interface is still very important in crystalline silicon solar cell devices. While hydrogen is important for the passivation of defects at the Si-SiO2 interface, atomic H at low temperatures can also introduce additional interface defects, which lead to substantially increased recombination. Previous work has shown that the defects are thermally unstable, however detailed properties of...
Negative charges were tunneled from Si surface into nitride film in the nitride/oxide/Si stacks by bias or corona charging. The tunneled charges appear to have linear relationship with the applied electrical field. A maximum negative charge density exists, when all K centers in nitride film are negative charged. At high bias condition, Si interface will take the risk of high energy electron damage...
The effect of H plasma exposure parameters, such as power, pressure and temperature, on the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. This increase is chiefly due to the generation of...
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