The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An 8-channels read-out front-end for LHC ATLAS Muon-Drift-Tubes detectors is presented (8xAFE). The system is composed by the cascade of the analog signal processing FrontEnd and of the Wilkinson A/D (to perform voltage-to-time conversion for time-over-threshold detection). The sensitivity at the output of the analog signal processing chain is 13.8mV/fC, while the Equivalent-Noise-Charge (ENC) is...
This paper discusses the applicability of CMOS (sub)-mm-Wave System-on-Chips in space explorations of the solar system, especially planetary missions. Specifically assessed are issues related to high levels of radiation encountered in deep space. To exemplify the type of technology infusion that is possible, we specifically feature the incorporation of a previously developed “self-healing” 12/48 GHz...
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and...
The performance of on-chip passives and their application at mm-wave frequencies in two key silicon technologies are presented in this paper. Power and linear combiners designed in advanced 130 nm SiGe-BiCMOS and 65 nm CMOS-SOI are used as demonstrators. Multi-port transformer and shielded-CPW-on-SOI power combiners realize insertion loss as low as 0.5 dB and reflected port to port impedance uniformity...
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication...
Design techniques for handset power amplifiers are discussed, with emphasis on high efficiency architectures and CMOS technology. Experimental results with prototype circuits including Doherty, envelope tracking, outphasing and digital polar modulation are presented. Future design challenges are also highlighted.
Advanced CMOS engineering strongly requires materials science-based technology in addition to (rather than) demonstrating exotic non-planar device structures and/or various smart integration techniques. This paper describes typical examples of materials-related device engineering in metal gate/high-k CMOS developments, focusing on basic issues such as EOT scalability with higher-k, an inversion layer...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.