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This paper reports a power amplifier (PA) terahertz monolithic integrated circuit (TMIC) from 180 to 240 GHz. This amplifier is fabricated from a 0.5‐μm indium phosphide double heterojunction bipolar transistor (InP DHBT) technology, jointly with a thin‐film microstrip wiring environment. Furthermore, an electromagnetic (EM) simulation method is proposed for the parameter extraction of InP DHBTs and...
In this paper, a novel small‐signal equivalent‐circuit model of terahertz InGaAs/InP double‐heterojunction bipolar transistor (DHBT) is presented. Two intrinsic base resistances are introduced to represent the nonuniform extrinsic impedance of base‐emitter and base‐collector junctions separately. This treatment makes the high‐frequency model more close to the triple‐mesa InP DHBT structure. Systematical...
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