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In article number 1705193, Qi Liu, Zengfeng Di, Ming Liu, and co‐workers break the typical current‐retention dilemma in cation‐based resistive switching (RS) devices for the first time by centralizing/decentralizing the conductive‐filament distribution to bidirectionally modulate the conductivefilament stability. Both a fast RS selector, with high on‐state current, and low‐power‐dissipation memory...
Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current‐retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current...
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