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The static noise margin (SNM) as well as Vth, gm, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides Vth variability, DIBL variability degrades SRAM stability and its Vdd dependence while the variability of gm and body factor has only a small effect.
A new normalization method of VT variability in terms of dopant depth profile is developed and applied to measured variation data of MOSFETs with four types of channel dopant (B, Sb, P, As) with different depth profiles. The normalized coefficient shows a constant value indicating the validity of the method. However, it is shown that only B has much larger coefficient, suggesting B has some extra...
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