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The static noise margin (SNM) as well as Vth, gm, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides Vth variability, DIBL variability degrades SRAM stability and its Vdd dependence while the variability of gm and body factor has only a small effect.
A special device-matrix-array (DMA) TEG of 16k bit SRAM cells has been designed. Static noise margins (SNM) and 6 transistors in cells are directly measured and their fluctuations are examined. It is found for the first time that one-side SNM follows the normal distribution up to ±4σ. It is also found that the cell stability is worse than circuit simulation using Vth of measured 6 transistors. Furthermore,...
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