The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Ultra thin tungsten nitride film growth by chemical vapor deposition was explored on thermally grown SiO 2 . In situ X-ray photoelectron spectroscopy (XPS) and low energy ion scattering spectroscopy are used to establish the minimum equivalent film thickness needed to fully cover the dielectric substrate. Three-dimensional tungsten nitride growth is suggested in the initial nucleation stage...
Tungsten carbide films were grown by chemical vapor deposition using W(CO) 6 and C 2 H 4 between 250 and 450 o C. Pyrolysis studies indicate W(CO) 6 thermally decomposes over the 150-200 o C temperature range with or without ethylene. Carbon incorporation increased from 13 to ~33% when C 2 H 4 was co-fed with W(CO) 6 . The W/C...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.