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The novel process of self-aligned fluorine doped oxide (SiOF) spacers on low temperature poly-Si (LTPS) lightly doped drain (LDD) thin film transistors (TFTs) is proposed. A fluorine doped oxide spacers were provided to generate the lower dissociation Si–F bonds adjusted to the interface of the drain which is the largest lateral electric field region for lightly doped drain structure. The stronger...
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