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We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.
We show that inline silicon waveguides inside a laser cavity facilitate laser modelocking due to TPA and TPA-induced FCA, and it can also provide Raman amplification and dual wavelength lasing in the same silicon waveguide.
A numerical investigation on noise figure (NF) inside the silicon waveguides pumped with high-repetition-rate pulses is carried out. The parameters of pump pulses are important to generate net gain and <7dB NF in silicon waveguides.
We demonstrate a novel broadband pulse compression and modelocking scheme in silicon waveguides. Experimentally we obtain 25 fold pulse compression and 400 ps modelocked pulses. Results are limited by the RC time constant of the diode.
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