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A ceramic target with Ga:In:Sn=4:64:32 metal ratio has been sintered and used for RF sputtering process to develop high quality Ga doped ITO (GITO) transparent conductive oxide layers, particularly for photovoltaic applications. The sputtering parameters (sputtering power, oxygen flow, and substrate temperature) have been varied first and optimized with respect to the resistivity measurements. The...
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