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In this paper, gate drive IC for SiC power MOSFETs using soft-switching technique gate drive method is designed and implemented. Designed IC is suitable for driving silicon carbide (SiC) power MOSFET. The gate drive IC using soft-switching gate drive method, which is composed of high side and low side soft-switching controller, reduce the overshoot and switching loss of the SiC power MOSFET during...
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