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For the first time, a new decoupling method of PBTI component from hot-carrier (HC) stress is proposed. It is found that the HC degradation is contributed from both PBTI and intrinsic HC component. Using the power-law time exponent of Vt shift in PBTI and HC, the intrinsic HC degradation can be extracted. In addition, a physical model for HC degradation in high-k/metal gate (HK/MG) device has been...
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