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In this paper, we demonstrate a nano‐channel array (NCA) structure to realize the control of threshold voltage (Vth) of AlGaN/GaN HEMTs. The fabricated NCA structure consists of multiple nano‐channels parallelly connected together. Using this structure, the Vth of AlGaN/GaN HEMTs can be systematically shifted from ‐3.92 V for a conventional depletion‐mode (D‐mode) AlGaN/GaN HEMT to 0.15 V for an enhancement‐mode...
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