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The 19‐electron VCoSb compounds are actually composites of an off‐stoichiometric half‐Heusler phase and impurities. Here the compositional adjustment is systematically studied in V1−xCoSb to obtain single‐phase V0.955CoSb. Hall measurements suggest that such a V vacancy, as well as Ti doping, can optimize the carrier concentration, which decreases from ≈11.3 × 1021 cm−3 for VCoSb to ≈6.3 × 1021 cm...
It has been previously shown that Zintl compounds Ca1−xYbxZn2Sb2 and EuZn2Sb2 could be good candidates as thermoelectric materials. However, the conventional synthesis process via melting-solidification-annealing introduces impurities and vacancies, resulting in abnormal high carrier concentration and ultimately low thermoelectric properties. Here we report the enhanced thermoelectric performance...
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