The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
First, fabrication and characterization of a NAND flash memory using novel memory cells of ferroelectric-gate field-effect transistors (FeFETs), which is named Fe-NAND, was reviewed. A 64 kb Fe-NAND memory cell array with bit-line- and block- selector circuits was produced and characterized. Several standard operations for a NAND flash memory were demonstrated. All-cell-erase, all-cell-program, and...
A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed.
This paper presents an 8 × 8 DRAM array fabricated using an aerosol jet printer to demonstrate the feasibility of gain-cell DRAMs in a p-type-only organic thin film transistor (OTFT) technology. This printing method can accommodate functional inks with a variety of viscosities and has a patterning precision of 10 μm. The underlying design philosophy was to implement a general purpose memory array...
Variations in the number and characteristics of charges or traps contributing to transistor degradation lead to a distribution of device “ages” at any given time. This issue is well understood in the study of time dependent dielectric breakdown, but is just beginning to be thoroughly addressed under bias temperature instability (BTI) and hot carrier injection (HCI) stress. In this paper, we present...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.