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As MOSFETs scaling down to nano-scale, short channel effect(SCE) become a critical issue. Multiple channel MOSFET structure such as FINFET has well gate controllability on channel charge, and will be used in nano-scale CMOS technology. In this work the performance of 20nm bulk FINFET is investigated by Using 3D full band Monte Carlo Method with Effective Potential Quantum Correction. Gate and drain...
This paper presents on-state characteristics of two types of UTB FD MOSFETs simulated by Monte Carlo method. The two devices under investigation have elevated and recessed source/drain respectively. The comparison of non-stationary transports effect is made between the two devices. Different non-stationary transports effect in the two devices is the cause of different on state characteristics. Transit...
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