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A high voltage LDMOS on partial silicon-on-insulator (PSOI) with a variable low-k (relative permittivity) dielectric buried layer (VLKD) and a buried p-layer (BP) is proposed (VLKD BPSOI). In the vertical direction, the low k value enhances the electric field strength in the buried dielectric (EI) and the Si window makes the substrate share the voltage drop, which leads to a high vertical breakdown...
REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been shown to offer good performance in a variety of application domains, both in bulk silicon and SOI substrates. This paper aims to offer a compendious and timely review of the two technologies and some works...
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