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The characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with electroluminescence peak wavelength of emission about 289 nm have been investigated by optimizing the last quantum barrier (LQB) in the active region. The results demonstrate that the internal quantum efficiency and radiative recombination rate of DUV-LEDs with a graded superlattice last quantum barrier (GSL...
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