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InGaN films were grown on off‐axis m ‐GaN substrates by metalorganic vapor phase epitaxy. Rocking curves of X‐ray diffraction around c‐axis revealed that Inx Ga1‐xN films incline to ±a1 direction when the film thickness and In composition x exceed a certain critical condition. The strain relaxation mechanism by introducing a2 and ‐a3 misfit dislocations at the interface is deduced from the ±a1 inclination...
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