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The surface blistering of the 6 times 1016 cm-2 dose hydrogen ion implanted GaAs wafers were investigated as a function of temperature and time during the rapid thermal annealing, as well as the implant energy. For the 50keV implanted samples, the blisters (microcavities) start to form and crack at a temperature larger than 300degC. The blister density increases rapidly with increasing the annealing...
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