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A vacuum‐ultraviolet (VUV) (10–200 nm) low‐dimensional photodetector is fabricated by F. Huang and co‐workers, as described on page 3921. A two‐step physical vapor‐transport method is designed to grow high‐quality single‐crystal aluminum nitride micro‐/nanowires, and realize a relatively fast response speed for VUV detection. This work may open a way for developing diminutive, power‐saving, and low‐cost...
A low‐dimensional‐structure vacuum‐ultraviolet‐sensitive photodetector based on high‐quality aluminum nitride (AlN) micro‐/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum‐ultraviolet (VUV) photon detection and opens a way for developing diminutive, power‐saving, and low‐cost VUV materials and sensors that can be potentially...
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