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In this paper GaAs MOS capacitors were fabricated with three advanced gate dielectrics such as Y2O3, HfYO3 and HfAlOx using radio frequency (RF) sputtering unit. Some samples were constructed using a Si interlayer in between the GaAs substrate and the high-k dielectric. Capacitance-voltage and current-voltage measurements were conducted for samples with and without a Si interlayer. Variation of leakage...
Metal–oxide–semiconductor (MOS) capacitors fabricated by depositing yttrium oxide (Y 2 O 3 ) using radio frequency sputtering system on top of n-GaAs substrates have been investigated. To study the interface properties, charge trapping behavior and breakdown characteristics of Y 2 O 3 gate dielectric, the MOS capacitors were subjected to constant current stress, high...
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