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Bottom gate ZnO-TFTs are fabricated and the devices' characteristics are reported. Before contact patterning, ZnO films were annealed in high vacuum environment under lower temperatures compared with in forming gas treatments. The characteristics of the ZnO-TFTs which have been annealed, especially at 300°C, have significant enhancement compared with those have not been annealed. The on/off current...
Typical bipolar resistive switching behavior are observed in the In/poly-Fe2O3/Nb-SrTiO3 (Nb-STO) devices. Rectifying I-V characteristics along with switching ratio significantly related to the polarity of read voltage have been found. A negative read voltage remarkable enhances the switching ratio to 107 comparing with 102 for the positive polarity, which demonstrates an efficient way to improve...
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