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In article number 1903387, Yanzhong Pei and co‐workers show yttrium as an efficient dopant for increasing the carrier concentration in Mg3SbBi alloy. The utilization of a tantalum sealing technique enables the successful synthesis of this material with coarse grains, leading to an inherently high carrier mobility. These features result in an extraordinary n‐type thermoelectric material with an ecofriendly...
Advancing thermoelectric n‐type Mg3Sb2 alloys requires both high carrier concentration offered by effective doping and high carrier mobility enabled by large grains. Existing research usually involves chalcogen doping on the anion sites, and the resultant carrier concentration reaches ≈3 × 1019 cm−3 or below. This is much lower than the optimum theoretically predicted, which suggets that further improvements...
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