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With the scaling of CMOS technology, subthreshold, gate, and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together, they account for more than 25 percent of power consumption in the current generation of leading edge designs. Different sources of leakage can affect each other by interacting through resultant intermediate node voltages. This is called the loading...
This paper discusses general procedures for simulation, design optimization, measurement and modeling of accurate and scalable on-chip RF spiral inductors in standard foundry CMOS for industrial applications. Electro-magnetic (EM) solver is used to simulate and optimize design of a library of inductors with various dimensions and specifications aiming to provide accurate and scalable inductors for...
With scaling of CMOS technologies, sub-threshold, gate and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together they account for more than 25% of power consumption in the current generation of leading edge designs. Different sources of leakage can affect each other by interacting through resultant intermediate node voltages. This is called the loading effect...
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