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Narrow band gaps and excellent ferroelectricity are intrinsically paradoxical in ferroelectrics as the leakage current caused by an increase in the number of thermally excited carriers will lead to a deterioration of ferroelectricity. A new molecular ferroelectric, hexane‐1,6‐diammonium pentaiodobismuth (HDA‐BiI5), was now developed through band gap engineering of organic–inorganic hybrid materials...
Eine schmale Bandlücke von 1.89 eV wird von H. Cai, R.‐G. Xiong et al. in ihrer Zuschrift auf S. 535 für das molekulare Ferroelektrikum Hexan‐1,6‐diammoniumpentaiodbismut angegeben. Hochwertige flexible dünne Filme aus diesem ferroelektrischen Material wurden bei niedriger Temperatur aus Lösungen abgeschieden.
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