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We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.
This paper presents the high reliability of the guardring-free planar InAlAs avalanche photodiode (APD) and its degradation mode analysis. We have conducted long-term and high-temperature aging tests under 175degC, 200degC, 225degC, and 250degC. There were three degradation modes as follows: 1) the increase in the dark current; 2) the decrease in the breakdown voltage; and 3) short circuit. Their...
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