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Two on-chip electromagnetic compatibility (EMC) solutions realized in the standard 0.18 μm CMOS technology are proposed. A slew rate controller for electromagnetic interference (EMI) reduction is demonstrated by increasing the rise and fall time of signal to lower the harmonic energy on FFT spectrum. Besides, a MOS plus MOM decoupling capacitor for both EMI and electromagnetic susceptibility (EMS)...
A compact ultra-wideband low-noise amplifier (LNA) with a 12.4-dB maximum gain, a 2.7-dB minimum noise figure (NF), and a bandwidth over 0.1-14 GHz is realized in a 0.13-μm CMOS technology. The circuit is basically an inductorless configuration using the resistive-feedback and current-reuse techniques for wideband and high-gain characteristics. It was found that a small inductor of only 0.4 nH can...
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